GSTDTAP

浏览/检索结果: 共2条,第1-2条 帮助

已选(0)清除 条数/页:   排序方式:
Power generation from ambient humidity using protein nanowires 期刊论文
NATURE, 2020, 578 (7796) : 550-+
作者:  Luong, Duy X.;  Bets, Ksenia V.;  Algozeeb, Wala Ali;  Stanford, Michael G.;  Kittrell, Carter;  Chen, Weiyin;  Salvatierra, Rodrigo V.;  Ren, Muqing;  McHugh, Emily A.;  Advincula, Paul A.;  Wang, Zhe;  Bhatt, Mahesh;  Guo, Hua;  Mancevski, Vladimir;  Shahsavari, Rouzbeh;  Yakobson, Boris I.;  Tour, James M.
收藏  |  浏览/下载:85/0  |  提交时间:2020/07/03

Harvesting energy from the environment offers the promise of clean power for self-sustained systems(1,2). Known technologies-such as solar cells, thermoelectric devices and mechanical generators-have specific environmental requirements that restrict where they can be deployed and limit their potential for continuous energy production(3-5). The ubiquity of atmospheric moisture offers an alternative. However, existing moisture-based energy-harvesting technologies can produce only intermittent, brief (shorter than 50 seconds) bursts of power in the ambient environment, owing to the lack of a sustained conversion mechanism(6-12). Here we show that thin-film devices made from nanometre-scale protein wires harvested from the microbe Geobacter sulfurreducens can generate continuous electric power in the ambient environment. The devices produce a sustained voltage of around 0.5 volts across a 7-micrometre-thick film, with a current density of around 17 microamperes per square centimetre. We find the driving force behind this energy generation to be a self-maintained moisture gradient that forms within the film when the film is exposed to the humidity that is naturally present in air. Connecting several devices linearly scales up the voltage and current to power electronics. Our results demonstrate the feasibility of a continuous energy-harvesting strategy that is less restricted by location or environmental conditions than other sustainable approaches.


A new type of energy-harvesting device, based on protein nanowires from the microbe Geobacter sulforreducens, can generate a sustained power output by producing a moisture gradient across the nanowire film using natural humidity.


  
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) 期刊论文
NATURE, 2020, 579 (7798) : 219-+
作者:  Luong, Duy X.;  Bets, Ksenia V.;  Algozeeb, Wala Ali;  Stanford, Michael G.;  Kittrell, Carter;  Chen, Weiyin;  Salvatierra, Rodrigo V.;  Ren, Muqing;  McHugh, Emily A.;  Advincula, Paul A.;  Wang, Zhe;  Bhatt, Mahesh;  Guo, Hua;  Mancevski, Vladimir;  Shahsavari, Rouzbeh
收藏  |  浏览/下载:79/0  |  提交时间:2020/07/03

Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore'  s law of the number of transistors in an integrated circuit(1). One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3). Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces(4) or bulk copper foils(5). However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films(6,7). Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)(5,8) is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.