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Spin current from sub-terahertz-generated antiferromagnetic magnons 期刊论文
NATURE, 2020, 578 (7793) : 70-+
作者:  Zemp, M.;  Huss, M.;  Thibert, E.;  Eckert, N.;  McNabb, R.;  Huber, J.;  Barandun, M.;  Machguth, H.;  Nussbaumer, S. U.;  Gartner-Roer, I.;  Thomson, L.;  Paul, F.;  Maussion, F.;  Kutuzov, S.;  Cogley, J. G.
收藏  |  浏览/下载:42/0  |  提交时间:2020/07/03

Pure spin currents are simultaneously generated and detected electrically through sub-terahertz magnons in the antiferromagnetic insulator Cr2O3, demonstrating the potential of magnon excitations in antiferromagnets for high-frequency spintronic devices.


Spin dynamics in antiferromagnets has much shorter timescales than in ferromagnets, offering attractive properties for potential applications in ultrafast devices(1-3). However, spin-current generation via antiferromagnetic resonance and simultaneous electrical detection by the inverse spin Hall effect in heavy metals have not yet been explicitly demonstrated(4-6). Here we report sub-terahertz spin pumping in heterostructures of a uniaxial antiferromagnetic Cr2O3 crystal and a heavy metal (Pt or Ta in its beta phase). At 0.240 terahertz, the antiferromagnetic resonance in Cr2O3 occurs at about 2.7 tesla, which excites only right-handed magnons. In the spin-canting state, another resonance occurs at 10.5 tesla from the precession of induced magnetic moments. Both resonances generate pure spin currents in the heterostructures, which are detected by the heavy metal as peaks or dips in the open-circuit voltage. The pure-spin-current nature of the electrically detected signals is unambiguously confirmed by the reversal of the voltage polarity observed under two conditions: when switching the detector metal from Pt to Ta, reversing the sign of the spin Hall angle(7-9), and when flipping the magnetic-field direction, reversing the magnon chirality(4,5). The temperature dependence of the electrical signals at both resonances suggests that the spin current contains both coherent and incoherent magnon contributions, which is further confirmed by measurements of the spin Seebeck effect and is well described by a phenomenological theory. These findings reveal the unique characteristics of magnon excitations in antiferromagnets and their distinctive roles in spin-charge conversion in the high-frequency regime.


  
Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111) 期刊论文
NATURE, 2020, 579 (7798) : 219-+
作者:  Luong, Duy X.;  Bets, Ksenia V.;  Algozeeb, Wala Ali;  Stanford, Michael G.;  Kittrell, Carter;  Chen, Weiyin;  Salvatierra, Rodrigo V.;  Ren, Muqing;  McHugh, Emily A.;  Advincula, Paul A.;  Wang, Zhe;  Bhatt, Mahesh;  Guo, Hua;  Mancevski, Vladimir;  Shahsavari, Rouzbeh
收藏  |  浏览/下载:80/0  |  提交时间:2020/07/03

Ultrathin two-dimensional (2D) semiconducting layered materials offer great potential for extending Moore'  s law of the number of transistors in an integrated circuit(1). One key challenge with 2D semiconductors is to avoid the formation of charge scattering and trap sites from adjacent dielectrics. An insulating van der Waals layer of hexagonal boron nitride (hBN) provides an excellent interface dielectric, efficiently reducing charge scattering(2,3). Recent studies have shown the growth of single-crystal hBN films on molten gold surfaces(4) or bulk copper foils(5). However, the use of molten gold is not favoured by industry, owing to its high cost, cross-contamination and potential issues of process control and scalability. Copper foils might be suitable for roll-to-roll processes, but are unlikely to be compatible with advanced microelectronic fabrication on wafers. Thus, a reliable way of growing single-crystal hBN films directly on wafers would contribute to the broad adoption of 2D layered materials in industry. Previous attempts to grow hBN monolayers on Cu (111) metals have failed to achieve mono-orientation, resulting in unwanted grain boundaries when the layers merge into films(6,7). Growing single-crystal hBN on such high-symmetry surface planes as Cu (111)(5,8) is widely believed to be impossible, even in theory. Nonetheless, here we report the successful epitaxial growth of single-crystal hBN monolayers on a Cu (111) thin film across a two-inch c-plane sapphire wafer. This surprising result is corroborated by our first-principles calculations, suggesting that the epitaxial growth is enhanced by lateral docking of hBN to Cu (111) steps, ensuring the mono-orientation of hBN monolayers. The obtained single-crystal hBN, incorporated as an interface layer between molybdenum disulfide and hafnium dioxide in a bottom-gate configuration, enhanced the electrical performance of transistors. This reliable approach to producing wafer-scale single-crystal hBN paves the way to future 2D electronics.


  
Promoting functional connectivity of anthropogenically-fragmented forest patches for multiple taxa across a critically endangered biome 期刊论文
LANDSCAPE AND URBAN PLANNING, 2019, 190
作者:  Smith, David A. Ehlers;  Smith, Yvette C. Ehlers;  Downs, Colleen T.
收藏  |  浏览/下载:9/0  |  提交时间:2019/11/27
Bird trait diversity  Ecological Circuit Theory  Ecological corridors  Ecosystem services  Mammal trait diversity  Tree trait diversity  
Towards a unified framework for connectivity that disentangles movement and mortality in space and time 期刊论文
ECOLOGY LETTERS, 2019, 22 (10) : 1680-1689
作者:  Fletcher, Robert J., Jr.;  Sefair, Jorge A.;  Wang, Chao;  Poli, Caroline L.;  Smith, Thomas A. H.;  Bruna, Emilio M.;  Holt, Robert D.;  Barfield, Michael;  Marx, Andrew J.;  Acevedo, Miguel A.
收藏  |  浏览/下载:13/0  |  提交时间:2019/11/27
Circuit theory  dispersal  fragmentation  habitat loss  least cost  Markov chain  matrix effects  random walk  networks