Global S&T Development Trend Analysis Platform of Resources and Environment
Ingeniously Two-Dimensional: Efficiently doping the semiconductors of tomorrow | |
admin | |
2021-06-22 | |
发布年 | 2021 |
语种 | 英语 |
国家 | 德国 |
领域 | 资源环境 |
正文(英文) | Electronics of the future are inconceivable without two-dimensional materials. They are the great hope for high-performance and energy-efficient electronic components. At the same time, however, the unique properties of two-dimensional materials make it difficult to dope them with foreign atoms. This step is necessary to precisely adjust the electrical conductivity and to transform the material into a p- or n-type semiconductor. A team led by Dr. Slawomir Prucnal from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) with the help of Dr. Arkady Krasheninnikov’s research group at HZDR and Prof. Dietrich Zahn from the TU Chemnitz have now achieved a breakthrough, as the researchers in the scientific journal Nanoscale (DOI: 10.1039/D0NR08935D) report. The cover layer they use makes it possible to process the new materials with methods already established for conventional semiconductors. This is a huge step on the path from the laboratory to industrial manufacturing. |
URL | 查看原文 |
来源平台 | Helmholtz Association |
文献类型 | 新闻 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/333399 |
专题 | 资源环境科学 |
推荐引用方式 GB/T 7714 | admin. Ingeniously Two-Dimensional: Efficiently doping the semiconductors of tomorrow. 2021. |
条目包含的文件 | 条目无相关文件。 |
个性服务 |
推荐该条目 |
保存到收藏夹 |
查看访问统计 |
导出为Endnote文件 |
谷歌学术 |
谷歌学术中相似的文章 |
[admin]的文章 |
百度学术 |
百度学术中相似的文章 |
[admin]的文章 |
必应学术 |
必应学术中相似的文章 |
[admin]的文章 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论