Ingeniously Two-Dimensional: Efficiently doping the semiconductors of tomorrow

GSTDTAP > 资源环境科学

	Ingeniously Two-Dimensional: Efficiently doping the semiconductors of tomorrow
	admin
	2021-06-22
发布年	2021
语种	英语
国家	德国
领域	资源环境
正文(英文)	Electronics of the future are inconceivable without two-dimensional materials. They are the great hope for high-performance and energy-efficient electronic components. At the same time, however, the unique properties of two-dimensional materials make it difficult to dope them with foreign atoms. This step is necessary to precisely adjust the electrical conductivity and to transform the material into a p- or n-type semiconductor. A team led by Dr. Slawomir Prucnal from the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) with the help of Dr. Arkady Krasheninnikov’s research group at HZDR and Prof. Dietrich Zahn from the TU Chemnitz have now achieved a breakthrough, as the researchers in the scientific journal Nanoscale (DOI: 10.1039/D0NR08935D) report. The cover layer they use makes it possible to process the new materials with methods already established for conventional semiconductors. This is a huge step on the path from the laboratory to industrial manufacturing.
URL	查看原文
来源平台	Helmholtz Association
文献类型	新闻
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/333399
专题	资源环境科学
推荐引用方式 GB/T 7714	admin. Ingeniously Two-Dimensional: Efficiently doping the semiconductors of tomorrow. 2021.