GSTDTAP  > 资源环境科学
DOI10.1038/s41467-017-02343-0
Inkjet-printed stretchable and low voltage synaptic transistor array
Molina-Lopez, F.1,6; Gao, T. Z.2; Kraft, U.3,7; Zhu, C.3; Ohlund, T.1,4; Pfattner, R.1,8; Feig, V. R.2; Kim, Y.3; Wang, S.1,9; Yun, Y.5; Bao, Z.1
2019-06-18
发表期刊NATURE COMMUNICATIONS
ISSN2041-1723
出版年2019
卷号10
文章类型Article
语种英语
国家USA; Sweden; South Korea; Belgium; England; Spain
英文摘要

Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm(2) V-1 s(-1) and currents per channel width of 0.2 mA cm(-1) at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics.


领域资源环境
收录类别SCI-E
WOS记录号WOS:000471871700001
WOS关键词THIN-FILM TRANSISTORS ; CARBON ; CIRCUITS ; ELECTRONICS ; FABRICATION ; DIELECTRICS
WOS类目Multidisciplinary Sciences
WOS研究方向Science & Technology - Other Topics
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文献类型期刊论文
条目标识符http://119.78.100.173/C666/handle/2XK7JSWQ/203594
专题资源环境科学
作者单位1.Stanford Univ, Dept Chem Engn, 443 Via Ortega, Stanford, CA 94305 USA;
2.Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA;
3.Stanford Univ, Dept Elect Engn, 350 Serra Mall, Stanford, CA 94305 USA;
4.Mid Sweden Univ, Dept Nat Sci, Holmgatan 10, S-85230 Sundsvall, Sweden;
5.Samsung Adv Inst Technol, 130 Samseong Ro, Suwon 16678, South Korea;
6.Katholieke Univ Leuven, Dept Mat Engn, Kasteelpk Arenberg 44, B-3001 Leuven, Belgium;
7.Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England;
8.CSIC, Inst Mat Sci Barcelona ICMAB, Campus UAB, Bellaterra 08193, Spain;
9.Univ Chicago, Inst Mol Engn, 5640S Ellis Ave, Chicago, IL 60637 USA
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GB/T 7714
Molina-Lopez, F.,Gao, T. Z.,Kraft, U.,et al. Inkjet-printed stretchable and low voltage synaptic transistor array[J]. NATURE COMMUNICATIONS,2019,10.
APA Molina-Lopez, F..,Gao, T. Z..,Kraft, U..,Zhu, C..,Ohlund, T..,...&Bao, Z..(2019).Inkjet-printed stretchable and low voltage synaptic transistor array.NATURE COMMUNICATIONS,10.
MLA Molina-Lopez, F.,et al."Inkjet-printed stretchable and low voltage synaptic transistor array".NATURE COMMUNICATIONS 10(2019).
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