Global S&T Development Trend Analysis Platform of Resources and Environment
DOI | 10.1038/s41467-017-02343-0 |
Inkjet-printed stretchable and low voltage synaptic transistor array | |
Molina-Lopez, F.1,6; Gao, T. Z.2; Kraft, U.3,7; Zhu, C.3; Ohlund, T.1,4; Pfattner, R.1,8; Feig, V. R.2; Kim, Y.3; Wang, S.1,9; Yun, Y.5; Bao, Z.1 | |
2019-06-18 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | USA; Sweden; South Korea; Belgium; England; Spain |
英文摘要 | Wearable and skin electronics benefit from mechanically soft and stretchable materials to conform to curved and dynamic surfaces, thereby enabling seamless integration with the human body. However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. The additive, non-contact and maskless nature of inkjet printing provides a simple, inexpensive and scalable route for stacking and patterning these chemically-sensitive materials over large areas. The transistors, which are stable at ambient conditions, display mobilities as high as 30 cm(2) V-1 s(-1) and currents per channel width of 0.2 mA cm(-1) at operation voltages as low as 1 V, owing to the ionic character of their printed gate dielectric. Furthermore, these transistors with double-layer capacitive dielectric can mimic the synaptic behavior of neurons, making them interesting for conformal brain-machine interfaces and other wearable bioelectronics. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000471871700001 |
WOS关键词 | THIN-FILM TRANSISTORS ; CARBON ; CIRCUITS ; ELECTRONICS ; FABRICATION ; DIELECTRICS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203594 |
专题 | 资源环境科学 |
作者单位 | 1.Stanford Univ, Dept Chem Engn, 443 Via Ortega, Stanford, CA 94305 USA; 2.Stanford Univ, Dept Mat Sci & Engn, 496 Lomita Mall, Stanford, CA 94305 USA; 3.Stanford Univ, Dept Elect Engn, 350 Serra Mall, Stanford, CA 94305 USA; 4.Mid Sweden Univ, Dept Nat Sci, Holmgatan 10, S-85230 Sundsvall, Sweden; 5.Samsung Adv Inst Technol, 130 Samseong Ro, Suwon 16678, South Korea; 6.Katholieke Univ Leuven, Dept Mat Engn, Kasteelpk Arenberg 44, B-3001 Leuven, Belgium; 7.Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England; 8.CSIC, Inst Mat Sci Barcelona ICMAB, Campus UAB, Bellaterra 08193, Spain; 9.Univ Chicago, Inst Mol Engn, 5640S Ellis Ave, Chicago, IL 60637 USA |
推荐引用方式 GB/T 7714 | Molina-Lopez, F.,Gao, T. Z.,Kraft, U.,et al. Inkjet-printed stretchable and low voltage synaptic transistor array[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Molina-Lopez, F..,Gao, T. Z..,Kraft, U..,Zhu, C..,Ohlund, T..,...&Bao, Z..(2019).Inkjet-printed stretchable and low voltage synaptic transistor array.NATURE COMMUNICATIONS,10. |
MLA | Molina-Lopez, F.,et al."Inkjet-printed stretchable and low voltage synaptic transistor array".NATURE COMMUNICATIONS 10(2019). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论