GSTDTAP  > 地球科学
DOI10.1126/science.aam9189
Isostructural metal-insulator transition in VO2
Lee, D.1; Chung, B.2; Shi, Y.3; Kim, G. -Y.4,11; Campbell, N.5; Xue, F.3; Song, K.4; Choi, S. -Y.4,11; Podkaminer, J. P.1; Kim, T. H.1; Ryan, P. J.6,7; Kim, J. -W.6; Paudel, T. R.8,9; Kang, J. -H.1; Spinuzzi, J. W.10; Tenne, D. A.10; Tsymbal, E. Y.8,9; Rzchowski, M. S.5; Chen, L. Q.3; Lee, J.2; Eom, C. B.1
2018-11-30
发表期刊SCIENCE
ISSN0036-8075
EISSN1095-9203
出版年2018
卷号362期号:6418页码:1037-+
文章类型Article
语种英语
国家USA; South Korea; Ireland
英文摘要

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.


领域地球科学 ; 气候变化 ; 资源环境
收录类别SCI-E
WOS记录号WOS:000451609000041
WOS关键词MOTT TRANSITION ; AB-INITIO ; PHASE ; FIELD ; STRAIN ; SUPPRESSION ; PEIERLS ; HUBBARD ; SPECTRA ; DRIVEN
WOS类目Multidisciplinary Sciences
WOS研究方向Science & Technology - Other Topics
引用统计
文献类型期刊论文
条目标识符http://119.78.100.173/C666/handle/2XK7JSWQ/200210
专题地球科学
资源环境科学
气候变化
作者单位1.Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA;
2.Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea;
3.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA;
4.Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea;
5.Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA;
6.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA;
7.Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland;
8.Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA;
9.Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA;
10.Boise State Univ, Dept Phys, Boise, ID 83725 USA;
11.POSTECH, Dept Mat & Sci, Pohang 37673, South Korea
推荐引用方式
GB/T 7714
Lee, D.,Chung, B.,Shi, Y.,et al. Isostructural metal-insulator transition in VO2[J]. SCIENCE,2018,362(6418):1037-+.
APA Lee, D..,Chung, B..,Shi, Y..,Kim, G. -Y..,Campbell, N..,...&Eom, C. B..(2018).Isostructural metal-insulator transition in VO2.SCIENCE,362(6418),1037-+.
MLA Lee, D.,et al."Isostructural metal-insulator transition in VO2".SCIENCE 362.6418(2018):1037-+.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Lee, D.]的文章
[Chung, B.]的文章
[Shi, Y.]的文章
百度学术
百度学术中相似的文章
[Lee, D.]的文章
[Chung, B.]的文章
[Shi, Y.]的文章
必应学术
必应学术中相似的文章
[Lee, D.]的文章
[Chung, B.]的文章
[Shi, Y.]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。