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DOI | 10.1126/science.aam9189 |
Isostructural metal-insulator transition in VO2 | |
Lee, D.1; Chung, B.2; Shi, Y.3; Kim, G. -Y.4,11; Campbell, N.5; Xue, F.3; Song, K.4; Choi, S. -Y.4,11; Podkaminer, J. P.1; Kim, T. H.1; Ryan, P. J.6,7; Kim, J. -W.6; Paudel, T. R.8,9; Kang, J. -H.1; Spinuzzi, J. W.10; Tenne, D. A.10; Tsymbal, E. Y.8,9; Rzchowski, M. S.5; Chen, L. Q.3; Lee, J.2; Eom, C. B.1 | |
2018-11-30 | |
发表期刊 | SCIENCE
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ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2018 |
卷号 | 362期号:6418页码:1037-+ |
文章类型 | Article |
语种 | 英语 |
国家 | USA; South Korea; Ireland |
英文摘要 | The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000451609000041 |
WOS关键词 | MOTT TRANSITION ; AB-INITIO ; PHASE ; FIELD ; STRAIN ; SUPPRESSION ; PEIERLS ; HUBBARD ; SPECTRA ; DRIVEN |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/200210 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA; 2.Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 16419, South Korea; 3.Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA; 4.Korea Inst Mat Sci, Dept Mat Modeling & Characterizat, Chang Won 642831, South Korea; 5.Univ Wisconsin, Dept Phys, 1150 Univ Ave, Madison, WI 53706 USA; 6.Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA; 7.Dublin City Univ, Sch Phys Sci, Dublin 9, Ireland; 8.Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA; 9.Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA; 10.Boise State Univ, Dept Phys, Boise, ID 83725 USA; 11.POSTECH, Dept Mat & Sci, Pohang 37673, South Korea |
推荐引用方式 GB/T 7714 | Lee, D.,Chung, B.,Shi, Y.,et al. Isostructural metal-insulator transition in VO2[J]. SCIENCE,2018,362(6418):1037-+. |
APA | Lee, D..,Chung, B..,Shi, Y..,Kim, G. -Y..,Campbell, N..,...&Eom, C. B..(2018).Isostructural metal-insulator transition in VO2.SCIENCE,362(6418),1037-+. |
MLA | Lee, D.,et al."Isostructural metal-insulator transition in VO2".SCIENCE 362.6418(2018):1037-+. |
条目包含的文件 | 条目无相关文件。 |
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