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美研究称改善后的建筑材料每年可储存160亿吨二氧化碳 快报文章
气候变化快报,2025年第2期
作者:  裴惠娟
Microsoft Word(15Kb)  |  收藏  |  浏览/下载:421/2  |  提交时间:2025/01/20
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On-device lead sequestration for perovskite solar cells 期刊论文
NATURE, 2020, 578 (7796) : 555-+
作者:  Fruchart, Michel;  Zhou, Yujie;  Vitelli, Vincenzo
收藏  |  浏览/下载:45/0  |  提交时间:2020/07/03

Perovskite solar cells, as an emerging high-efficiency and low-cost photovoltaic technology(1-6), face obstacles on their way towards commercialization. Substantial improvements have been made to device stability(7-10), but potential issues with lead toxicity and leaching from devices remain relatively unexplored(11-16). The potential for lead leakage could be perceived as an environmental and public health risk when using perovskite solar cells in building-integrated photovoltaics(17-23). Here we present a chemical approach for on-device sequestration of more than 96 per cent of lead leakage caused by severe device damage. A coating of lead-absorbing material is applied to the front and back sides of the device stack. On the glass side of the front transparent conducting electrode, we use a transparent lead-absorbing molecular film containing phosphonic acid groups that bind strongly to lead. On the back (metal) electrode side, we place a polymer film blended with lead-chelating agents between the metal electrode and a standard photovoltaic packing film. The lead-absorbing films on both sides swell to absorb the lead, rather than dissolve, when subjected to water soaking, thus retaining structural integrity for easy collection of lead after damage.


Using lead-absorbing materials to coat the front and back of perovskite solar cells can prevent lead leaching from damaged devices, without affecting the device performance or long-term operation stability.


  
Fast two-qubit logic with holes in germanium 期刊论文
NATURE, 2020, 577 (7791) : 487-+
作者:  Halpin-Healy, Tyler S.;  Klompe, Sanne E.;  Sternberg, Samuel H.;  Fernandez, Israel S.
收藏  |  浏览/下载:32/0  |  提交时间:2020/07/03

Universal quantum information processing requires the execution of single-qubit and two-qubit logic. Across all qubit realizations(1), spin qubits in quantum dots have great promise to become the central building block for quantum computation(2). Excellent quantum dot control can be achieved in gallium arsenide(3-5), and high-fidelity qubit rotations and two-qubit logic have been demonstrated in silicon(6-9), but universal quantum logic implemented with local control has yet to be demonstrated. Here we make this step by combining all of these desirable aspects using hole quantum dots in germanium. Good control over tunnel coupling and detuning is obtained by exploiting quantum wells with very low disorder, enabling operation at the charge symmetry point for increased qubit performance. Spin-orbit coupling obviates the need for microscopic elements close to each qubit and enables rapid qubit control with driving frequencies exceeding 100 MHz. We demonstrate a fast universal quantum gate set composed of single-qubit gates with a fidelity of 99.3 per cent and a gate time of 20 nanoseconds, and two-qubit logic operations executed within 75 nanoseconds. Planar germanium has thus matured within a year from a material that can host quantum dots to a platform enabling two-qubit logic, positioning itself as an excellent material for use in quantum information applications.


Spin qubits based on hole states in strained germanium could offer the most scalable platform for quantum computation.