Stacking-engineered ferroelectricity in bilayer boron nitride

doi:10.1126/science.abd3230

GSTDTAP > 气候变化

DOI	10.1126/science.abd3230
	Stacking-engineered ferroelectricity in bilayer boron nitride
	Kenji Yasuda; Xirui Wang; Kenji Watanabe; Takashi Taniguchi; Pablo Jarillo-Herrero
	2021-06-25
发表期刊	Science
出版年	2021
英文摘要	Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. [1458][1] and p. [1462][2]; see also abi7296, p. [1389][3] Two-dimensional (2D) ferroelectrics with robust polarization down to atomic thicknesses provide building blocks for functional heterostructures. Experimental realization remains challenging because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a nonferroelectric parent compound by using van der Waals assembly. Parallel-stacked bilayer boron nitride exhibits out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed through the resistance of an adjacently stacked graphene sheet. Twisting the boron nitride sheets by a small angle changes the dynamics of switching because of the formation of moiré ferroelectricity with staggered polarization. The ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications. [1]: /lookup/doi/10.1126/science.abd3230 [2]: /lookup/doi/10.1126/science.abe8177 [3]: /lookup/doi/10.1126/science.abi7296
领域	气候变化 ; 资源环境
URL	查看原文
引用统计	被引频次：344[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/334148
专题	气候变化资源环境科学
推荐引用方式 GB/T 7714	Kenji Yasuda,Xirui Wang,Kenji Watanabe,et al. Stacking-engineered ferroelectricity in bilayer boron nitride[J]. Science,2021.
APA	Kenji Yasuda,Xirui Wang,Kenji Watanabe,Takashi Taniguchi,&Pablo Jarillo-Herrero.(2021).Stacking-engineered ferroelectricity in bilayer boron nitride.Science.
MLA	Kenji Yasuda,et al."Stacking-engineered ferroelectricity in bilayer boron nitride".Science (2021).