Enhanced ferroelectricity in ultrathin films grown directly on silicon (vol 580, pg 478, 2020)

doi:10.1038/s41586-020-2297-6

GSTDTAP > 地球科学

DOI	10.1038/s41586-020-2297-6
	Enhanced ferroelectricity in ultrathin films grown directly on silicon (vol 580, pg 478, 2020)
	Tsai, Hanshen 1,2; Higo, Tomoya 1,2; Kondou, Kouta 2,3; Nomoto, Takuya 2,4; Sakai, Akito 1,2; Kobayashi, Ayuko 1; Nakano, Takafumi 2,5; Yakushiji, Kay 2,5; Arita, Ryotaro 2,3,4; Miwa, Shinji 1,2,6; Otani, Yoshichika 1,2,3,6; Nakatsuji, Satoru 1,2,6,7
	2020-04-20
发表期刊	NATURE
ISSN	0028-0836
EISSN	1476-4687
出版年	2020
卷号	581 期号:7808 页码:E5-E5
文章类型	Correction
语种	英语
英文关键词	An amendment to this paper has been published and can be accessed via a link at the top of the paper.
领域	地球科学 ; 气候变化 ; 资源环境
收录类别	SCI-E
WOS记录号	WOS:000531504100001
WOS类目	Multidisciplinary Sciences
WOS研究方向	Science & Technology - Other Topics
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/281380
专题	地球科学资源环境科学气候变化
作者单位	1.Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba, Japan; 2.Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama, Japan; 3.RIKEN, CEMS, Wako, Saitama, Japan; 4.Univ Tokyo, Dept Appl Phys, Tokyo, Japan; 5.Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki, Japan; 6.Univ Tokyo, Trans Scale Quantum Sci Inst, Tokyo, Japan; 7.Univ Tokyo, Dept Phys, Tokyo, Japan
推荐引用方式 GB/T 7714	Tsai, Hanshen,Higo, Tomoya,Kondou, Kouta,et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon (vol 580, pg 478, 2020)[J]. NATURE,2020,581(7808):E5-E5.
APA	Tsai, Hanshen.,Higo, Tomoya.,Kondou, Kouta.,Nomoto, Takuya.,Sakai, Akito.,...&Nakatsuji, Satoru.(2020).Enhanced ferroelectricity in ultrathin films grown directly on silicon (vol 580, pg 478, 2020).NATURE,581(7808),E5-E5.
MLA	Tsai, Hanshen,et al."Enhanced ferroelectricity in ultrathin films grown directly on silicon (vol 580, pg 478, 2020)".NATURE 581.7808(2020):E5-E5.