Enhanced ferroelectricity in ultrathin films grown directly on silicon

doi:10.1038/s41586-020-2208-x

GSTDTAP > 地球科学

DOI	10.1038/s41586-020-2208-x
	Enhanced ferroelectricity in ultrathin films grown directly on silicon
	Arnold, Fabian M.1; Weber, Miriam S.2; Gonda, Imre 1; Gallenito, Marc J.3; Adenau, Sophia 1; Egloff, Pascal 1,5; Zimmermann, Iwan 1,5; Hutter, Cedric A. J.1; Huerlimann, Lea M.1; Peters, Eike E.4; Piel, Joern 4; Meloni, Gabriele 3; Medalia, Ohad 2; Seeger, Markus A.1
	2020-04-16
发表期刊	NATURE
ISSN	0028-0836
EISSN	1476-4687
出版年	2020
卷号	580 期号:7804 页码:478-+
文章类型	Article
语种	英语
国家	USA; South Korea
英文关键词	Ultrathin ferroelectric materials could potentially enable low-power perovskite ferroelectric tetragonality logic and nonvolatile memories(1,2). As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides-the archetypal ferroelectric system(3). Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes(4). Here we report ferroelectricity in ultrathin doped hafnium oxide (HfO2), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems-that is, from perovskite-derived complex oxides to fluorite-structure binary oxides-in which ' reverse' size effects counterintuitively stabilize polar symmetry in the ultrathin regime. Enhanced switchable ferroelectric polarization is achieved in doped hafnium oxide films grown directly onto silicon using low-temperature atomic layer deposition, even at thicknesses of just one nanometre.
领域	地球科学 ; 气候变化 ; 资源环境
收录类别	SCI-E
WOS记录号	WOS:000528065800018
WOS关键词	THIN-FILMS ; GATE OXIDES ; POLARIZATION ; NANOSCALE ; ORIGIN
WOS类目	Multidisciplinary Sciences
WOS研究方向	Science & Technology - Other Topics
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/281248
专题	地球科学资源环境科学气候变化
作者单位	1.Univ Zurich, Inst Med Microbiol, Zurich, Switzerland; 2.Univ Zurich, Dept Biochem, Zurich, Switzerland; 3.Univ Texas Dallas, Dept Chem & Biochem, Richardson, TX 75083 USA; 4.Swiss Fed Inst Technol, Inst Microbiol, Zurich, Switzerland; 5.Linkster Therapeut, Zurich, Switzerland
推荐引用方式 GB/T 7714	Arnold, Fabian M.,Weber, Miriam S.,Gonda, Imre,et al. Enhanced ferroelectricity in ultrathin films grown directly on silicon[J]. NATURE,2020,580(7804):478-+.
APA	Arnold, Fabian M..,Weber, Miriam S..,Gonda, Imre.,Gallenito, Marc J..,Adenau, Sophia.,...&Seeger, Markus A..(2020).Enhanced ferroelectricity in ultrathin films grown directly on silicon.NATURE,580(7804),478-+.
MLA	Arnold, Fabian M.,et al."Enhanced ferroelectricity in ultrathin films grown directly on silicon".NATURE 580.7804(2020):478-+.