Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

doi:10.1126/science.aba5980

GSTDTAP > 气候变化

DOI	10.1126/science.aba5980
	Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics
	Lijun Liu; Jie Han; Lin Xu; Jianshuo Zhou; Chenyi Zhao; Sujuan Ding; Huiwen Shi; Mengmeng Xiao; Li Ding; Ze Ma; Chuanhong Jin; Zhiyong Zhang; Lian-Mao Peng
	2020-05-22
发表期刊	Science
出版年	2020
英文摘要	Although semiconducting carbon nanotubes (CNTs) are promising candidates to replace silicon in transistors at extremely small dimensions, their purity, density, and alignment must be improved. Liu et al. combined a multiple dispersion sorting process, which improves purity, and a dimension-limited self-alignment process to produce well-aligned CNT arrays on a 10-centimeter silicon wafer. The density is sufficiently high (100 to 200 CNTs per micrometer) that large-scale integrated circuits could be fabricated. With ionic liquid gating, the performance metrics exceeded those of conventional silicon transistors with similar dimensions. Science , this issue p. [850][1] Single-walled carbon nanotubes (CNTs) may enable the fabrication of integrated circuits smaller than 10 nanometers, but this would require scalable production of dense and electronically pure semiconducting nanotube arrays on wafers. We developed a multiple dispersion and sorting process that resulted in extremely high semiconducting purity and a dimension-limited self-alignment (DLSA) procedure for preparing well-aligned CNT arrays (within alignment of 9 degrees) with a tunable density of 100 to 200 CNTs per micrometer on a 10-centimeter silicon wafer. Top-gate field-effect transistors (FETs) fabricated on the CNT array show better performance than that of commercial silicon metal oxide–semiconductor FETs with similar gate length, in particular an on-state current of 1.3 milliamperes per micrometer and a recorded transconductance of 0.9 millisiemens per micrometer for a power supply of 1 volt, while maintaining a low room-temperature subthreshold swing of <90 millivolts per decade using an ionic-liquid gate. Batch-fabricated top-gate five-stage ring oscillators exhibited a highest maximum oscillating frequency of >8 gigahertz. [1]: /lookup/doi/10.1126/science.aba5980
领域	气候变化 ; 资源环境
URL	查看原文
引用统计
文献类型	期刊论文
条目标识符	http://119.78.100.173/C666/handle/2XK7JSWQ/270491
专题	气候变化资源环境科学
推荐引用方式 GB/T 7714	Lijun Liu,Jie Han,Lin Xu,et al. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics[J]. Science,2020.
APA	Lijun Liu.,Jie Han.,Lin Xu.,Jianshuo Zhou.,Chenyi Zhao.,...&Lian-Mao Peng.(2020).Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics.Science.
MLA	Lijun Liu,et al."Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics".Science (2020).