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DOI | 10.1038/s41467-019-12600-z |
Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches | |
Chen, Lingxiu1,2; He, Li1,3; Wang, Hui Shan1,4; Wang, Haomin1; Tang, Shujie1,5; Cong, Chunxiao6,7; Xie, Hong1; Li, Lei1,4; Xia, Hui8; Li, Tianxin8; Wu, Tianru1; Zhang, Daoli3; Deng, Lianwen4; Yu, Ting6; Xie, Xiaoming1,2; Jiang, Mianheng1,2 | |
2019-10-08 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2017 |
卷号 | 8 |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China; Singapore |
英文摘要 | Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000395855500001 |
WOS关键词 | RAMAN-SPECTROSCOPY ; ATOMIC LAYERS ; GROWTH |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/204582 |
专题 | 资源环境科学 |
作者单位 | 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China; 2.ShanghaiTech Univ, Sch Phys Sci & Technol, 319 Yueyang Rd, Shanghai 200031, Peoples R China; 3.Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China; 4.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China; 5.Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China; 6.Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, 21 Nanyang Link, Singapore 637371, Singapore; 7.Fudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China; 8.Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, 500 Yu Tian Rd, Shanghai 200083, Peoples R China |
推荐引用方式 GB/T 7714 | Chen, Lingxiu,He, Li,Wang, Hui Shan,et al. Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches[J]. NATURE COMMUNICATIONS,2019,8. |
APA | Chen, Lingxiu.,He, Li.,Wang, Hui Shan.,Wang, Haomin.,Tang, Shujie.,...&Jiang, Mianheng.(2019).Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches.NATURE COMMUNICATIONS,8. |
MLA | Chen, Lingxiu,et al."Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches".NATURE COMMUNICATIONS 8(2019). |
条目包含的文件 | 条目无相关文件。 |
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