资源环境科技发展态势分析平台

The pursuit of optoelectronic devices operating in the mid-infrared regime is driven by both fundamental interests and envisioned applications ranging from imaging, sensing to communications. Despite continued achievements in traditional semiconductors, notorious obstacles such as the complicated growth processes and cryogenic operation preclude the usage of infrared detectors. As an alternative path towards high-performance photodetectors, hybrid semiconductor/graphene structures have been intensively explored. However, the operation bandwidth of such photodetectors has been limited to visible and near-infrared regimes. Here we demonstrate a mid-infrared hybrid photodetector enabled by coupling graphene with a narrow bandgap semiconductor, Ti2O3 (E-g = 0.09 eV), which achieves a high responsivity of 300 A W-1 in a broadband wavelength range up to 10 mu m. The obtained responsivity is about two orders of magnitude higher than that of the commercial mid-infrared photodetectors. Our work opens a route towards achieving high-performance optoelectronics operating in the mid-infrared regime.