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DOI | 10.1038/s41467-019-09229-3 |
Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition | |
Liu, Donghua1,2; Chen, Xiaosong1,2; Hu, Yibin3,4; Sun, Tai5; Song, Zhibo6; Zheng, Yujie6; Cao, Yongbin1,2; Cai, Zhi1,2; Cao, Min1,2; Peng, Lan1,2; Huang, Yuli6; Du, Lei3,4; Yang, Wuli1,2; Chen, Gang3,4; Wei, Dapeng5; Shen, Andrew Thye6; Wei, Dacheng1,2 | |
2019-03-21 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2018 |
卷号 | 9 |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China; Singapore |
英文摘要 | Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO2/Si, which are used as SERS substrates. The enhancement factor, which depends on the GQD size, is higher than conventional graphene sheets with sensitivity down to 1 x 10(-9) mol L-1 rhodamine. This is attributed to the high-quality GQDs with atomically clean surfaces and large number of edges, as well as the enhanced charge transfer between molecules and GQDs with appropriate diameters due to the existence of Van Hove singularities in the electronic density of states. This work demonstrates a sensitive SERS substrate, and is valuable for applications of GQDs in graphene-based photonics and optoelectronics. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000422646500008 |
WOS关键词 | VAN-HOVE SINGULARITIES ; ELECTRONIC-STRUCTURE ; RHODAMINE 6G ; MOLECULES ; PLATFORM ; NANOTUBES ; MECHANISM ; GROWTH |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/204277 |
专题 | 资源环境科学 |
作者单位 | 1.Fudan Univ, State Key Lab Mol Engn Polymers, Shanghai 200433, Peoples R China; 2.Fudan Univ, Dept Macromol Sci, Shanghai 200433, Peoples R China; 3.Chinese Acad Sci, Shanghai Natl Lab Infrared Phys, Shanghai 200433, Peoples R China; 4.Chinese Acad Sci, Inst Tech Phys, Shanghai 200433, Peoples R China; 5.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multi Scale Mfg Technol, Chongqing 400714, Peoples R China; 6.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117542, Singapore |
推荐引用方式 GB/T 7714 | Liu, Donghua,Chen, Xiaosong,Hu, Yibin,et al. Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition[J]. NATURE COMMUNICATIONS,2019,9. |
APA | Liu, Donghua.,Chen, Xiaosong.,Hu, Yibin.,Sun, Tai.,Song, Zhibo.,...&Wei, Dacheng.(2019).Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.NATURE COMMUNICATIONS,9. |
MLA | Liu, Donghua,et al."Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition".NATURE COMMUNICATIONS 9(2019). |
条目包含的文件 | 条目无相关文件。 |
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