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DOI | 10.1038/s41467-018-06966-9 |
Optical charge state control of spin defects in 4H-SiC | |
Wolfowicz, Gary1,2; Anderson, Christopher P.1,3; Yeats, Andrew L.1,4,5; Whiteley, Samuel J.1,3; Niklas, Jens6; Poluektov, Oleg G.6; Heremans, F. Joseph1,4,5; Awschalom, David D.1,4,5 | |
2017-11-30 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2017 |
卷号 | 8 |
文章类型 | Article |
语种 | 英语 |
国家 | USA; Japan |
英文摘要 | Defects in silicon carbide (SiC) have emerged as a favorable platform for optically active spin-based quantum technologies. Spin qubits exist in specific charge states of these defects, where the ability to control these states can provide enhanced spin-dependent readout and long-term charge stability. We investigate this charge state control for two major spin qubits in 4H-SiC, the divacancy and silicon vacancy, obtaining bidirectional optical charge conversion between the bright and dark states of these defects. We measure increased photoluminescence from divacancy ensembles by up to three orders of magnitude using near-ultraviolet excitation, depending on the substrate, and without degrading the electron spin coherence time. This charge conversion remains stable for hours at cryogenic temperatures, allowing spatial and persistent patterning of the charge state populations. We develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000416895400018 |
WOS关键词 | ELECTRONIC-STRUCTURE ; SILICON-CARBIDE ; DIAMOND ; VACANCY ; SEMICONDUCTORS ; THERMOMETRY ; EPR |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/204054 |
专题 | 资源环境科学 |
作者单位 | 1.Univ Chicago, Inst Mol Engn, Chicago, IL 60637 USA; 2.Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan; 3.Univ Chicago, Dept Phys, Chicago, IL 60637 USA; 4.Argonne Natl Lab, Inst Mol Engn, Lemont, IL 60439 USA; 5.Argonne Natl Lab, Div Mat Sci, Lemont, IL 60439 USA; 6.Argonne Natl Lab, Chem Sci & Engn Div, Lemont, IL 60439 USA |
推荐引用方式 GB/T 7714 | Wolfowicz, Gary,Anderson, Christopher P.,Yeats, Andrew L.,et al. Optical charge state control of spin defects in 4H-SiC[J]. NATURE COMMUNICATIONS,2017,8. |
APA | Wolfowicz, Gary.,Anderson, Christopher P..,Yeats, Andrew L..,Whiteley, Samuel J..,Niklas, Jens.,...&Awschalom, David D..(2017).Optical charge state control of spin defects in 4H-SiC.NATURE COMMUNICATIONS,8. |
MLA | Wolfowicz, Gary,et al."Optical charge state control of spin defects in 4H-SiC".NATURE COMMUNICATIONS 8(2017). |
条目包含的文件 | 条目无相关文件。 |
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