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DOI | 10.1038/s41467-018-02986-7 |
Twist angle-dependent conductivities across MoS2/graphene heterojunctions | |
Liao, Mengzhou1,2; Wu, Ze-Wen3; Du, Luojun1,2; Zhang, Tingting1,2,3; Wei, Zheng1,2; Zhu, Jianqi1,2; Yu, Hua1,2; Tang, Jian1,2; Gu, Lin1,2; Xing, Yanxia3; Yang, Rong1,2,4; Shi, Dongxia1,2,4; Yao, Yugui3; Zhang, Guangyu1,2,4,5 | |
2018-10-04 | |
发表期刊 | NATURE COMMUNICATIONS
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ISSN | 2041-1723 |
出版年 | 2018 |
卷号 | 9 |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China |
英文摘要 | Van der Waals heterostructures stacked from different two- dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by similar to 5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0 degrees/30 degrees. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000446313800003 |
WOS关键词 | DER-WAALS HETEROSTRUCTURES ; BORON-NITRIDE ; GRAPHENE ; MOS2 ; ELECTRONICS ; MODULATION ; GRAPHITE |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203657 |
专题 | 资源环境科学 |
作者单位 | 1.Chinese Acad Sci, Inst Phys, CAS Key Lab Nanoscale Phys & Devices, Beijing 100190, Peoples R China; 2.Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100190, Peoples R China; 3.Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China; 4.Beijing Key Lab Nanomat & Nanodevices, Beijing 100190, Peoples R China; 5.Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Liao, Mengzhou,Wu, Ze-Wen,Du, Luojun,et al. Twist angle-dependent conductivities across MoS2/graphene heterojunctions[J]. NATURE COMMUNICATIONS,2018,9. |
APA | Liao, Mengzhou.,Wu, Ze-Wen.,Du, Luojun.,Zhang, Tingting.,Wei, Zheng.,...&Zhang, Guangyu.(2018).Twist angle-dependent conductivities across MoS2/graphene heterojunctions.NATURE COMMUNICATIONS,9. |
MLA | Liao, Mengzhou,et al."Twist angle-dependent conductivities across MoS2/graphene heterojunctions".NATURE COMMUNICATIONS 9(2018). |
条目包含的文件 | 条目无相关文件。 |
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