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DOI | 10.1038/s41467-017-00434-6 |
Gallium arsenide solar cells grown at rates exceeding 300 mu m h(-1) by hydride vapor phase epitaxy | |
Metaferia, Wondwosen; Schulte, Kevin L.; Simon, John; Johnston, Steve; Ptak, Aaron J. | |
2019-07-26 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | USA |
英文摘要 | We report gallium arsenide (GaAs) growth rates exceeding 300 mu m h(-1) using dynamic hydride vapor phase epitaxy. We achieved these rates by maximizing the gallium to gallium monochloride conversion efficiency, and by utilizing a mass-transport-limited growth regime with fast kinetics. We also demonstrate gallium indium phosphide growth at rates exceeding 200 mu m h(-1) using similar growth conditions. We grew GaAs solar cell devices by incorporating the high growth rate of GaAs and evaluated its material quality at these high rates. Solar cell growth rates ranged from 35 to 309 mu m h(-1) with open circuit voltages ranging from 1.04 to 1.07 V. The best devices exceeded 25% efficiency under the AM1.5 G solar spectrum. The high open-circuit voltages indicate that high material quality can be maintained at these extremely high growth rates. These results have strong implications toward lowering the deposition cost of III-V materials potentially enabling the deposition of high efficiency devices in mere seconds. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000477705500002 |
WOS关键词 | CAPTURE CROSS-SECTIONS ; GAAS ; SPECTROSCOPY ; TRANSPORT ; ELECTRON ; CVD |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203432 |
专题 | 资源环境科学 |
作者单位 | Natl Renewable Energy Lab, Golden, CO 80401 USA |
推荐引用方式 GB/T 7714 | Metaferia, Wondwosen,Schulte, Kevin L.,Simon, John,et al. Gallium arsenide solar cells grown at rates exceeding 300 mu m h(-1) by hydride vapor phase epitaxy[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Metaferia, Wondwosen,Schulte, Kevin L.,Simon, John,Johnston, Steve,&Ptak, Aaron J..(2019).Gallium arsenide solar cells grown at rates exceeding 300 mu m h(-1) by hydride vapor phase epitaxy.NATURE COMMUNICATIONS,10. |
MLA | Metaferia, Wondwosen,et al."Gallium arsenide solar cells grown at rates exceeding 300 mu m h(-1) by hydride vapor phase epitaxy".NATURE COMMUNICATIONS 10(2019). |
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