Global S&T Development Trend Analysis Platform of Resources and Environment
DOI | 10.1038/ncomms15810 |
Self-selective van der Waals heterostructures for large scale memory array | |
Sun, Linfeng1; Zhang, Yishu2; Han, Gyeongtak1; Hwang, Geunwoo1; Jiang, Jinbao1,3; Joo, Bomin4; Watanabe, Kenji5; Taniguchi, Takashi5; Kim, Young-Min1,3; Yu, Woo Jong4; Kong, Bai-Sun4; Zhao, Rong2; Yang, Heejun1 | |
2019-07-18 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | South Korea; Singapore; Japan |
英文摘要 | The large-scale crossbar array is a promising architecture for hardware-amenable energy efficient three-dimensional memory and neuromorphic computing systems. While accessing a memory cell with negligible sneak currents remains a fundamental issue in the crossbar array architecture, up-to-date memory cells for large-scale crossbar arrays suffer from process and device integration (one selector one resistor) or destructive read operation (complementary resistive switching). Here, we introduce a self-selective memory cell based on hexagonal boron nitride and graphene in a vertical heterostructure. Combining nonvolatile and volatile memory operations in the two hexagonal boron nitride layers, we demonstrate a self-selectivity of 10(10) with an on/off resistance ratio larger than 10(3). The graphene layer efficiently blocks the diffusion of volatile silver filaments to integrate the volatile and non-volatile kinetics in a novel way. Our self-selective memory minimizes sneak currents on large-scale memory operation, thereby achieving a practical readout margin for terabit-scale and energy-efficient memory integration. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000475852900004 |
WOS关键词 | NONVOLATILE ; TRANSITION ; POWER ; FILM |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203347 |
专题 | 资源环境科学 |
作者单位 | 1.Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea; 2.Singapore Univ Technol & Design, 8 Somapah Rd, Singapore 487372, Singapore; 3.Sungkyunkwan Univ, Inst Basic Sci, IBS Ctr Integrated Nanostruct Phys CINAP, Suwon 16419, South Korea; 4.Sungkyunkwan Univ, Dept Elect & Comp Engn, Suwon 16419, South Korea; 5.Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan |
推荐引用方式 GB/T 7714 | Sun, Linfeng,Zhang, Yishu,Han, Gyeongtak,et al. Self-selective van der Waals heterostructures for large scale memory array[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Sun, Linfeng.,Zhang, Yishu.,Han, Gyeongtak.,Hwang, Geunwoo.,Jiang, Jinbao.,...&Yang, Heejun.(2019).Self-selective van der Waals heterostructures for large scale memory array.NATURE COMMUNICATIONS,10. |
MLA | Sun, Linfeng,et al."Self-selective van der Waals heterostructures for large scale memory array".NATURE COMMUNICATIONS 10(2019). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论