Global S&T Development Trend Analysis Platform of Resources and Environment
DOI | 10.1038/ncomms15241 |
Atomic mechanism of strong interactions at the graphene/sapphire interface | |
Dou, Zhipeng1,2; Chen, Zhaolong3; Li, Ning1,4; Yang, Shenyuan5,6; Yu, Zhiwei7; Sun, Yuanwei1,4; Li, Yuehui1,4; Liu, Bingyao1; Luo, Qiang4; Ma, Tianbao7; Liao, Lei2; Liu, Zhongfan3,8; Gao, Peng1,4,9,10 | |
2019-11-01 | |
发表期刊 | NATURE COMMUNICATIONS |
ISSN | 2041-1723 |
出版年 | 2019 |
卷号 | 10 |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China |
英文摘要 | For atomically thin two-dimensional materials, interfacial effects may dominate the entire response of devices, because most of the atoms are in the interface/surface. Graphene/ sapphire has great application in electronic devices and semiconductor thin-film growth, but the nature of this interface is largely unknown. Here we find that the sapphire surface has a strong interaction with some of the carbon atoms in graphene to form a C-O-Al configuration, indicating that the interface interaction is no longer a simple van der Waals interaction. In addition, the structural relaxation of sapphire near the interface is significantly suppressed and very different from that of a bare sapphire surface. Such an interfacial C-O-Al bond is formed during graphene growth at high temperature. Our study provides valuable insights into understanding the electronic structures of graphene on sapphire and remote control of epitaxy growth of thin films by using a graphene-sapphire substrate. |
领域 | 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000493712700006 |
WOS关键词 | ALPHA-AL2O3 0001 SURFACE ; GRAPHENE ; SUPERCONDUCTIVITY ; GROWTH ; FILMS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/203289 |
专题 | 资源环境科学 |
作者单位 | 1.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China; 2.Hunan Univ, Sch Phys & Elect, Minist Educ, Key Lab Micro Nanooptoelect Devices, Changsha 410082, Hunan, Peoples R China; 3.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem CNC, Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China; 4.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China; 5.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China; 6.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China; 7.Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China; 8.BGI, Beijing 100095, Peoples R China; 9.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China; 10.Beijing Key Lab Quantum Devices, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Dou, Zhipeng,Chen, Zhaolong,Li, Ning,et al. Atomic mechanism of strong interactions at the graphene/sapphire interface[J]. NATURE COMMUNICATIONS,2019,10. |
APA | Dou, Zhipeng.,Chen, Zhaolong.,Li, Ning.,Yang, Shenyuan.,Yu, Zhiwei.,...&Gao, Peng.(2019).Atomic mechanism of strong interactions at the graphene/sapphire interface.NATURE COMMUNICATIONS,10. |
MLA | Dou, Zhipeng,et al."Atomic mechanism of strong interactions at the graphene/sapphire interface".NATURE COMMUNICATIONS 10(2019). |
条目包含的文件 | 条目无相关文件。 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论