GSTDTAP  > 地球科学
DOI10.1126/science.aar4426
Gate-induced superconductivity in a monolayer topological insulator
Sajadi, Ebrahim1,2; Palomaki, Tauno3; Fei, Zaiyao3; Zhao, Wenjin3; Bement, Philip1,2; Olsen, Christian1,2; Luescher, Silvia1,2; Xu, Xiaodong3,4; Folk, Joshua A.1,2; Cobden, David H.3
2018-11-23
发表期刊SCIENCE
ISSN0036-8075
EISSN1095-9203
出版年2018
卷号362期号:6417页码:922-+
文章类型Article
语种英语
国家Canada; USA
英文摘要

The layered semimetal tungsten ditelluride (WTe2) has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We found that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping at temperatures below 1 kelvin. The 2D TI-superconductor transition can be driven by applying a small gate voltage. This discovery offers possibilities for gate-controlled devices combining superconductivity and nontrivial topological properties, and could provide a basis for quantum information schemes based on topological protection.


领域地球科学 ; 气候变化 ; 资源环境
收录类别SCI-E
WOS记录号WOS:000451124500036
WOS关键词CRITICAL-FIELD ; QUANTUM ; TRANSITION ; STATE
WOS类目Multidisciplinary Sciences
WOS研究方向Science & Technology - Other Topics
引用统计
文献类型期刊论文
条目标识符http://119.78.100.173/C666/handle/2XK7JSWQ/200145
专题地球科学
资源环境科学
气候变化
作者单位1.Univ British Columbia, Stewart Blusson Quantum Matter Inst, Vancouver, BC V6T 1Z4, Canada;
2.Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada;
3.Univ Washington, Dept Phys, Seattle, WA 98195 USA;
4.Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA
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GB/T 7714
Sajadi, Ebrahim,Palomaki, Tauno,Fei, Zaiyao,et al. Gate-induced superconductivity in a monolayer topological insulator[J]. SCIENCE,2018,362(6417):922-+.
APA Sajadi, Ebrahim.,Palomaki, Tauno.,Fei, Zaiyao.,Zhao, Wenjin.,Bement, Philip.,...&Cobden, David H..(2018).Gate-induced superconductivity in a monolayer topological insulator.SCIENCE,362(6417),922-+.
MLA Sajadi, Ebrahim,et al."Gate-induced superconductivity in a monolayer topological insulator".SCIENCE 362.6417(2018):922-+.
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