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| DOI | 10.1126/science.aaq1479 | 
| 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals | |
| Chang, Cheng1; Wu, Minghui2; He, Dongsheng2; Pei, Yanling1; Wu, Chao-Feng3; Wu, Xuefeng2; Yu, Hulei4; Zhu, Fangyuan5; Wang, Kedong2; Chen, Yue4; Huang, Li2; Li, Jing-Feng3; He, Jiaqing2; Zhao, Li-Dong1 | |
| 2018-05-18 | |
| 发表期刊 | SCIENCE  | 
| ISSN | 0036-8075 | 
| EISSN | 1095-9203 | 
| 出版年 | 2018 | 
| 卷号 | 360期号:6390页码:778-782 | 
| 文章类型 | Article | 
| 语种 | 英语 | 
| 国家 | Peoples R China | 
| 英文摘要 | Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties. | 
| 领域 | 地球科学 ; 气候变化 ; 资源环境 | 
| 收录类别 | SCI-E | 
| WOS记录号 | WOS:000432473500046 | 
| WOS关键词 | HIGH-THERMOELECTRIC PERFORMANCE ; THERMAL-CONDUCTIVITY ; SINGLE-CRYSTALS ; BULK THERMOELECTRICS ; EFFICIENCY ; ENHANCEMENT ; TEMPERATURE ; SCATTERING ; DISTORTION ; MECHANISM | 
| WOS类目 | Multidisciplinary Sciences | 
| WOS研究方向 | Science & Technology - Other Topics | 
| 引用统计 | |
| 文献类型 | 期刊论文 | 
| 条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/198698 | 
| 专题 | 地球科学 资源环境科学 气候变化 | 
| 作者单位 | 1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China; 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China; 3.Tsinghua Univ, Sch Mat Sci & Engn, Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China; 4.Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China; 5.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China | 
| 推荐引用方式 GB/T 7714 | Chang, Cheng,Wu, Minghui,He, Dongsheng,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782. | 
| APA | Chang, Cheng.,Wu, Minghui.,He, Dongsheng.,Pei, Yanling.,Wu, Chao-Feng.,...&Zhao, Li-Dong.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782. | 
| MLA | Chang, Cheng,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782. | 
| 条目包含的文件 | 条目无相关文件。 | |||||
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