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DOI | 10.1126/science.aao5360 |
Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain | |
Xie, Saien1,2,3; Tu, Lijie1; Han, Yimo1; Huang, Lujie4; Kang, Kibum2,3; Lao, Ka Un4; Poddar, Preeti2,3; Park, Chibeom2,3; Muller, David A.1,5; DiStasio, Robert A., Jr.4; Park, Jiwoong2,3,4 | |
2018-03-09 | |
发表期刊 | SCIENCE |
ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2018 |
卷号 | 359期号:6380页码:1131-1135 |
文章类型 | Article |
语种 | 英语 |
国家 | USA |
英文摘要 | Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers-despite large lattice mismatches-are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000426835900040 |
WOS关键词 | ELECTRONIC-PROPERTIES ; MOLYBDENUM-DISULFIDE ; EPITAXIAL-GROWTH ; LAYER MOS2 ; HETEROSTRUCTURES ; PIEZOELECTRICITY ; OPTOELECTRONICS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/198148 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA; 2.Univ Chicago, Inst Mol Engn, Dept Chem, Chicago, IL 60637 USA; 3.Univ Chicago, James Franck Inst, Chicago, IL 60637 USA; 4.Cornell Univ, Dept Chem & Chem Biol, Ithaca, NY 14853 USA; 5.Cornell Univ, Kavli Inst, Cornell Nanoscale Sci, Ithaca, NY 14853 USA |
推荐引用方式 GB/T 7714 | Xie, Saien,Tu, Lijie,Han, Yimo,et al. Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain[J]. SCIENCE,2018,359(6380):1131-1135. |
APA | Xie, Saien.,Tu, Lijie.,Han, Yimo.,Huang, Lujie.,Kang, Kibum.,...&Park, Jiwoong.(2018).Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain.SCIENCE,359(6380),1131-1135. |
MLA | Xie, Saien,et al."Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain".SCIENCE 359.6380(2018):1131-1135. |
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