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DOI | 10.1126/science.aal4062 |
All-printed thin-film transistors from networks of liquid-exfoliated nanosheets | |
Kelly, Adam G.1,2; Hallam, Toby3; Backes, Claudia1,2; Harvey, Andrew1,2; Esmaeily, Amir Sajad1,2; Godwin, Ian1,2; Coelho, Joao3; Nicolosi, Valeria3; Lauth, Jannika4; Kulkarni, Aditya4; Kinge, Sachin5; Siebbeles, Laurens D. A.4; Duesberg, Georg S.3,6; Coleman, Jonathan N.1,2 | |
2017-04-07 | |
发表期刊 | SCIENCE
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ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2017 |
卷号 | 356期号:6333页码:69-72 |
文章类型 | Article |
语种 | 英语 |
国家 | Ireland; Netherlands; Belgium; Germany |
英文摘要 | All-printed transistors consisting of interconnected networks of various types of two-dimensional nanosheets are an important goal in nanoscience. Using electrolytic gating, we demonstrate all-printed, vertically stacked transistors with graphene source, drain, and gate electrodes, a transition metal dichalcogenide channel, and a boron nitride (BN) separator, all formed from nanosheet networks. The BN network contains an ionic liquid within its porous interior that allows electrolytic gating in a solid-like structure. Nanosheet network channels display on: off ratios of up to 600, transconductances exceeding 5 millisiemens, and mobilities of > 0.1 square centimeters per volt per second. Unusually, the on-currents scaled with network thickness and volumetric capacitance. In contrast to other devices with comparable mobility, large capacitances, while hindering switching speeds, allow these devices to carry higher currents at relatively low drive voltages. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000398689100039 |
WOS关键词 | 2-DIMENSIONAL NANOSHEETS ; DEVICE APPLICATIONS ; MOS2 ; THICKNESS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/195768 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Ctr Res Adapt Nanostruct & Nanodev CRAN, Sch Phys, Dublin 2, Ireland; 2.Trin Coll Dublin, AMBER, Dublin 2, Ireland; 3.Trin Coll Dublin, Sch Chem, CRANN & AMBER, Dublin 2, Ireland; 4.Delft Univ Technol, Dept Chem Engn, NL-2629 HZ Delft, Netherlands; 5.Toyota Motor Europe, Mat Res & Dev, B-1930 Toyota, Belgium; 6.Univ Bundeswehr, Fac Elect Engn & Informat Techol, Inst Phys, EIT 2, Munich, Germany |
推荐引用方式 GB/T 7714 | Kelly, Adam G.,Hallam, Toby,Backes, Claudia,et al. All-printed thin-film transistors from networks of liquid-exfoliated nanosheets[J]. SCIENCE,2017,356(6333):69-72. |
APA | Kelly, Adam G..,Hallam, Toby.,Backes, Claudia.,Harvey, Andrew.,Esmaeily, Amir Sajad.,...&Coleman, Jonathan N..(2017).All-printed thin-film transistors from networks of liquid-exfoliated nanosheets.SCIENCE,356(6333),69-72. |
MLA | Kelly, Adam G.,et al."All-printed thin-film transistors from networks of liquid-exfoliated nanosheets".SCIENCE 356.6333(2017):69-72. |
条目包含的文件 | 条目无相关文件。 |
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