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DOI | 10.1126/science.aaj1628 |
Scaling carbon nanotube complementary transistors to 5-nm gate lengths | |
Qiu, Chenguang; Zhang, Zhiyong1; Xiao, Mengmeng; Yang, Yingjun; Zhong, Donglai; Peng, Lian-Mao1 | |
2017-01-20 | |
发表期刊 | SCIENCE |
ISSN | 0036-8075 |
EISSN | 1095-9203 |
出版年 | 2017 |
卷号 | 355期号:6322页码:271-+ |
文章类型 | Article |
语种 | 英语 |
国家 | Peoples R China |
英文摘要 | High-performance top-gated carbon nanotube field-effect transistors (CNT FETs) with a gate length of 5 nanometers can be fabricated that perform better than silicon complementary metal-oxide semiconductor (CMOS) FETs at the same scale. A scaling trend study revealed that the scaled CNT-based devices, which use graphene contacts, can operate much faster and at much lower supply voltage (0.4 versus 0.7 volts) and with much smaller subthreshold slope (typically 73 millivolts per decade). The 5-nanometer CNT FETs approached the quantum limit of FETs by using only one electron per switching operation. In addition, the contact length of the CNT CMOS devices was also scaled down to 25 nanometers, and a CMOS inverter with a total pitch size of 240 nanometers was also demonstrated. |
领域 | 地球科学 ; 气候变化 ; 资源环境 |
收录类别 | SCI-E |
WOS记录号 | WOS:000392204800033 |
WOS关键词 | FIELD-EFFECT TRANSISTORS ; HIGH-PERFORMANCE ; CMOS DEVICES ; BENCHMARKING ; ELECTRONICS |
WOS类目 | Multidisciplinary Sciences |
WOS研究方向 | Science & Technology - Other Topics |
URL | 查看原文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://119.78.100.173/C666/handle/2XK7JSWQ/195259 |
专题 | 地球科学 资源环境科学 气候变化 |
作者单位 | 1.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China; 2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Qiu, Chenguang,Zhang, Zhiyong,Xiao, Mengmeng,et al. Scaling carbon nanotube complementary transistors to 5-nm gate lengths[J]. SCIENCE,2017,355(6322):271-+. |
APA | Qiu, Chenguang,Zhang, Zhiyong,Xiao, Mengmeng,Yang, Yingjun,Zhong, Donglai,&Peng, Lian-Mao.(2017).Scaling carbon nanotube complementary transistors to 5-nm gate lengths.SCIENCE,355(6322),271-+. |
MLA | Qiu, Chenguang,et al."Scaling carbon nanotube complementary transistors to 5-nm gate lengths".SCIENCE 355.6322(2017):271-+. |
条目包含的文件 | 条目无相关文件。 |
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